DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

FS6130-01 View Datasheet(PDF) - AMI Semiconductor

Part Name
Description
Manufacturer
FS6130-01
AMI
AMI Semiconductor AMI
FS6130-01 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
FS6130
VCXO Clock Generator IC
AMERICAN MICROSYSTEMS, INC.
Preliminary
May 2000
Table 5: DC Electrical Specifications (VDD = 3.3V nominal)
Unless otherwise stated, VDD = 3.3V ± 10%, no load on any output, and ambient temperature range TA = 0°C to 70°C. Parameters denoted with an asterisk ( * ) represent nominal characterization
data and are not production tested to any specific limits. Where given, MIN and MAX characterization data are ± 3σ f rom typical. Negative currents indicate current flows out of the device.
PARAMETER
SYMBOL
CONDITIONS/DESCRIPTION
MIN.
TYP. MAX. UNITS
Overall
Supply Current, Dynamic, with Loaded
Outputs
IDD
fXTAL = 27MHz; CL = 10pF, VDD = 3.3V
mA
Crystal Oscillator
Crystal Loading Capacitance
CL(xtal)
As seen by a crystal connected to XIN and
XOUT
20
pF
Crystal Drive Level
RXTAL=20;
200
uW
Crystal Oscillator Feedback (XIN)
Threshold Bias Voltage
VTH
High-Level Input Current
IIH
Low-Level Input Current
IIL
860
mV
34
µA
-21
µA
Crystal Oscillator Drive (XOUT)
High-Level Output Source Current
Low-Level Output Sink Current
IOH
V(XIN) = 3.3V, VO = 0V
IOL
V(XIN) = 0V, VO = 3.3V
-0.5
mA
15
mA
Clock Outputs (CLKx)
High-Level Output Source Current *
Low-Level Output Sink Current *
Output Impedance *
Short Circuit Source Current *
Short Circuit Sink Current *
IOH
VO = 2.0V
IOL
VO = 0.4V
zOH
VO = 0.1VDD; output driving high
zOL
VO = 0.1VDD; output driving low
IOSH
VO = 0V; shorted for 30s, max.
IOSL
VO = 3.3V; shorted for 30s, max.
-40
mA
17
mA
25
25
-55
mA
55
mA
4
ISO9001
5.1.00
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]