VNH100N04 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
VNH100N04 Datasheet PDF : 7 Pages
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VNH100N04
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
VDS Drain-source Voltage (Vin = 0)
Vin Input Voltage
ID
Drain Current
IR Reverse DC Output Current
Vesd
Ptot
Electrostatic Discharge (C= 100 pF, R=1.5 KΩ)
Total Dissipation at Tc = 25 oC
Tj Operating Junction Temperature
Tc Case Operating Temperature
Tstg Storage Temperature
Value
Internally Clamped
18
Internally Limited
-50
2000
208
Internally Limited
Internally Limited
-55 to 150
Unit
V
V
A
A
V
W
oC
oC
oC
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
0.6
Max
30
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
VCLAMP
VCLTH
VI NC L
IDSS
IISS
Parameter
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input-Source Reverse
Clamp Voltage
Zero Input Voltage
Drain Current (Vin = 0)
Supply Current from
Input Pin
Test Conditions
ID = 30 A Vin = 0
ID = 2 mA Vin = 0
Iin = -1 mA
VDS = 13 V
VDS = 25 V
VDS = 0 V Vin = 10 V
Min.
36
Typ.
42
35
-1
250
Max.
48
-0.3
50
200
500
Unit
V
V
V
µA
µA
µA
ON (∗)
Symbol
VI S(th )
RDS(on)
Parameter
Input Threshold
Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = Vin ID = 1 mA
Vin = 10 V ID = 30 A
Vin = 5 V ID = 30 A
Min.
0.8
Typ.
Max.
3
Unit
V
0.012 Ω
0.015 Ω
DYNAMIC
Symbol
gfs (∗)
Coss
Parameter
Forward
Transconductance
Output Capacitance
Test Conditions
VDS = 13 V ID = 30 A
VDS = 13 V f = 1 MHz Vin = 0
Min.
Typ.
40
Max.
Unit
S
1800 3000 pF
2/7
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