LBCW68GLT3G View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

LBCW68GLT3G

General Purpose Transistors

Unspecified 

LESHAN RADIO COMPANY, LTD.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

ON CHARACTERISTICS

DC Current Gain

hFE

( IC= –10 mAdc, VCE = –1.0 Vdc )

120

—

( IC= –100 mAdc, VCE = –1.0 Vdc )

160

—

( IC= –300 mAdc, VCE = –1.0 Vdc )

60

—

Collector–Emitter Saturation Voltage

( IC = – 300 mAdc, IB = –30 mAdc )

V CE(sat)

—

—

Base–Emitter Saturation Voltage

( IC = – 500 mAdc, IB = –50 mAdc )

V BE(sat)

—

—

SMSMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

fT

100

—

(I C = –20mAdc, V CE = –10 Vdc, f = 100 MHz)

Output Capacitance

(V CB = – 10 Vdc, I E = 0, f = 1.0 MHz)

C obo

—

—

Input Capacitance

(V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz)

C ibo

—

—

Noise Figure

NF

(V CE= – 5.0 Vdc, I C = – 0.2 mAdc, RS = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz)

—

—

LBCW68GLT1G

Max

400

—

—

– 1.5

– 2.0

—

18

105

10

Unit

—

Vdc

Vdc

MHz

pF

pF

dB

2/3

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