2SK2850-01
FUJI POWER MOSFET
Drain-source on-state resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
8
6
4
max.
typ.
2
0
-50
0
50
100
150
Tch [••]
Gate threshold voltage
VGS(th)=f(Tch):ID=1mA,VDS=VGS
5.0
4.0
max.
3.0
typ.
min.
2.0
1.0
0.0
-50
0
50
100
150
Tch [oC]
Typical gate charge characteristic
VGS=f(Qg):ID=6A,Tch=25°C
800
40
Vcc=720V
700
600
Vcc=4158070V2V0V
35
30
500 450V
25
400
20
300
15
200 180V
10
100
5
0
0
0 20 40 60 80 100 120 140 160 180
Qg [nC]
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
10n
1n
Ciss
100p
Coss
Crss
10p
10-2
10-1
100
101
102
VDS [V]
Forward characteristic of reverse of diode
IF=f(VSD):80µs Pulse test,VGS=0V
102
Avalanche energy derating
Eas=f(starting Tch):Vcc=90V,IAV=6A
300
250
101
200
Tch=25 oC typ.
100
150
10-1
10-2
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD [V]
100
50
0
0
50
100
150
Starting Tch [oC]
3