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M1L43 View Datasheet(PDF) - Toshiba

Part NameDescriptionManufacturer
M1L43 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE Toshiba
Toshiba Toshiba
M1L43 Datasheet PDF : 6 Pages
1 2 3 4 5 6
SM1L43
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak OffState Current
I
Gate Trigger Voltage
II
III
I
Gate Trigger Current
II
III
Peak OnState Voltage
Gate NonTrigger Voltage
Holding Current
Thermal Resistance
Thermal Resistance
SYMBOL
TEST CONDITION
IDRM
VGT
IGT
VTM
VGD
IH
Rth (jc)
Rth (ja)
VDRM = 800V
V D =12V,
RL = 20
T2 (+) , Gate (+)
T2 (+) , Gate ()
T2 () , Gate ()
VD = 12V,
RL = 20
T2 (+) , Gate (+)
T2 (+) , Gate ()
T2 () , Gate ()
ITM = 1.5A
VD = Rated, Tc = 125°C
VD = 12V, ITM = 1A
Junction to Case, AC
Junction to Ambient, AC
MIN TYP. MAX UNIT
10
µA
1.5
1.5
V
1.5
10
10
mA
10
1.5
V
0.2
V
10
mA
40 °C / W
180 °C / W
MARKING
NUMBER
*1
TYPE
SYMBOL
SM1L43
MARK
M1L43
Example
*2
8A : January 1998
8B : February 1998
8L : December 1998
2
2001-07-10
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