STP16NF06 View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
STP16NF06 Datasheet PDF : 9 Pages
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STP16NF06
STP16NF06FP
N-CHANNEL 60V - 0.08 Ω - 16A TO-220/TO-220FP
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP16NF06
STP60NF06FP
60 V
60 V
<0.1 Ω
<0.1 Ω
16 A
11 A
s TYPICAL RDS(on) = 0.08Ω
s EXCEPTIONAL dv/dt CAPABILITY
s LOW GATE CHARGE AT 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s HIGH CURRENT, HIGH SWITCHING SPEED
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
VISO
Insulation Withstand Voltage (DC)
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(*) Current Limited by package’s thermal resistance
April 2002
.
STP16NF06
16
11
64
45
0.3
--------
Value
STP16NF06FP
60
60
± 20
11(*)
7.5(*)
44(*)
25
0.17
20
130
2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
-55 to 175
°C
(1) ISD ≤ 16A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 8A, VDD = 30V
1/9
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