Plastic Photodiode Package with Visible Blocking Filter
PDB-C156F
PAPCAKCAKGAGEEDDIIMMEENNSSIOIONNSSINICNHC[Hmm[m] m]
.059 [1.50]
.118 [3.00]
.025 [0.63] REF
.144 [3.67] REF
120°
VIEWING
ANGLE
.291 [7.40]
.590 [15.00]
CATHODE
2X .020 [0.50] SQUARE
.201 [5.10]
.100 [2.54]
CHIP
DIMENSIONS
INCH
[mm]ANODE
.649 [16.50]
CHIP DIMENSIONS INCH [mm]
.125 [3.17]
SQUARE
.112 [2.84] SQUARE
ACTIVE AREA
PPLLAASSTTIICCSSIDIDEELOLOOKOEKREPRACPKAACGKE AGE
FEATURES
• Large active area
• Photoconductive
• Low cost
• High speed
DESCRIPTION
The PDB-C156F is a blue enhanced PIN silicon
photodiode in a photoconductive mode with a
daylight filter, packaged in a plastic sidelooker
package.
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
VBR
PARAMETER
Reverse Voltage
0.60
MIN MAX UNITS
0.50
50
V
0.40
TSTG
Storage Temperature
-40 +100 °C
0.30
TO
Operating Temperature
-40 +80
°C
0.20
TS
Soldering Temperature*
+260 °C
0.10
0.00
* 1/16 inch from case for 3 seconds max.
APPLICATIONS
• Smoke detectors
• Light pen detectors
• TV & VCR remotes
• IR data links
SPECTRAL RESPONSE
Wavelength (nm)
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
ISC
ID
RSH
CJ
lrange
VBR
NEP
tr
CHARACTERISTIC
Short Circuit Current
Dark Current
Shunt Resistance
Junction Capacitance
Spectral Application Range
Breakdown Voltage
Noise Equivalent Power
Response Time
TEST CONDITIONS
H = 100 fc, 2850 K
VR = 10 V
VR = 10 mV
VR = 10 V, f = 1 MHz
Spot Scan
I = 10 μA
VR = 10V @ l=Peak
RL = 50 Ω,VR = 50 V
MIN
70
100
700
30
TYP MAX
90
2
15
150
10
15
1100
75
2.4x10-14
15
UNITS
μA
nA
MW
pF
nm
V
W/ √ Hz
nS
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com