IRFP4232PBF View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRFP4232PBF

PDP MOSFET

International Rectifier 

IRFP4232PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

Drain-to-Source Breakdown Voltage

250 ––– ––– V VGS = 0V, ID = 250µA

∆ΒVDSS/∆TJ

RDS(on)

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

–––

–––

180

30

e ––– mV/°C Reference to 25°C, ID = 1mA

35.7 mΩ VGS = 10V, ID = 42A

VGS(th)

Gate Threshold Voltage

3.0 ––– 5.0 V VDS = VGS, ID = 250µA

∆VGS(th)/∆TJ

IDSS

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

––– -15 ––– mV/°C

––– ––– 5.0 µA VDS = 200V, VGS = 0V

––– ––– 150

VDS = 200V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -20V

gfs

Forward Transconductance

Qg

Total Gate Charge

95 ––– –––

––– 160 240

e S VDS = 25V, ID = 42A

nC VDD = 125V, ID = 42A, VGS = 10V

Qgd

Gate-to-Drain Charge

td(on)

Turn-On Delay Time

––– 60 –––

––– 37 –––

Ãe VDD = 125V, VGS = 10V

tr

Rise Time

––– 100 ––– ns ID = 42A

td(off)

Turn-Off Delay Time

––– 64 –––

RG = 5.0Ω

tf

Fall Time

––– 63 –––

See Fig. 22

tst

Shoot Through Blocking Time

100 ––– ––– ns VDD = 200V, VGS = 15V, RG= 4.7Ω

EPULSE

Energy per Pulse

––– 310 –––

L = 220nH, C= 0.4µF, VGS = 15V

µJ VDS = 200V, RG= 4.7Ω, TJ = 25°C

––– 950 –––

L = 220nH, C= 0.4µF, VGS = 15V

VDS = 200V, RG= 4.7Ω, TJ = 100°C

Ciss

Input Capacitance

––– 7290 –––

VGS = 0V

Coss

Output Capacitance

––– 610 ––– pF VDS = 25V

Crss

Reverse Transfer Capacitance

––– 240 –––

ƒ = 1.0MHz,

See Fig.5

Coss eff.

Effective Output Capacitance

––– 420 –––

VGS = 0V, VDS = 0V to 200V

LD

Internal Drain Inductance

––– 5.0 –––

Between lead,

D

nH 6mm (0.25in.)

LS

Internal Source Inductance

––– 13 –––

from package

G

and center of die contact

S

Avalanche Characteristics

EAS

EAR

VDS(Avalanche)

IAS

Parameter

d Single Pulse Avalanche Energy

™ Repetitive Avalanche Energy

Ù Repetitive Avalanche Voltage

Ãd Avalanche Current

Diode Characteristics

Parameter

IS @ TC = 25°C Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Typ.

Max.

Units

–––

220

mJ

–––

43

mJ

300

–––

V

–––

42

A

Min.

–––

–––

–––

–––

–––

Typ.

–––

–––

–––

240

1230

Max. Units

Conditions

60

MOSFET symbol

A showing the

240

integral reverse

1.0

360

1850

p-n junction diode.

e V TJ = 25°C, IS = 42A, VGS = 0V

ns TJ = 25°C, IF = 42A, VDD = 50V

e nC di/dt = 100A/µs

2

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