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IRFP4232PBF View Datasheet(PDF) - International Rectifier

Part Name
Description
Manufacturer
IRFP4232PBF
IR
International Rectifier IR
IRFP4232PBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
PD - 96965A
PDP MOSFET
IRFP4232PbF
Features
l Advanced process technology
Key Parameters
l Key parameters optimized for PDP Sustain &
VDS min
250
V
Energy Recovery applications
l Low EPULSE rating to reduce the power
dissipation in Sustain & ER applications
l Low QG for fast response
l High repetitive peak current capability for
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
300
V
30
m:
EPULSE typ.
310
µJ
IRP max @ TC= 100°C
117
A
reliable operation
l Short fall & rise times for fast switching
TJ max
175
°C
l175°C operating junction temperature for
improved ruggedness
D
l Repetitive avalanche capability for robustness
and reliability
G
S
TO-247AC
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
VGS (TRANSIENT)
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c Pulsed Drain Current
g Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
f Junction-to-Case
Notes  through … are on page 8
www.irf.com
Max.
±20
±30
60
42
240
117
430
210
2.9
-40 to + 175
300
x x 10lb in (1.1N m)
Typ.
–––
Max.
0.35
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
09/14/07
 

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