DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

DM07652RB View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
DM07652RB Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
FSDM0565RB
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Parameter
Drain-source voltage
Vstr Max Voltage
Pulsed Drain current (Tc=25°C)(1)
Continuous Drain Current(Tc=25°C)
Continuous Drain Current(Tc=100°C)
Single pulsed avalanche energy (2)
Single pulsed avalanche current (3)
Supply voltage
Input voltage range
Symbol
VDSS
VSTR
IDM
ID
EAS
IAS
VCC
VFB
Total power dissipation(Tc=25°C)
PD(Watt H/S)
Operating junction temperature
Operating ambient temperature
Storage temperature range
ESD Capability, HBM Model (All pins
excepts for Vstr and Vfb)
ESD Capability, Machine Model (All pins
excepts for Vstr and Vfb)
Tj
TA
TSTG
-
-
Notes:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L=14mH, starting Tj=25°C
3. L=13uH, starting Tj=25°C
Value
650
650
11
2.8
1.7
190
-
20
-0.3 to VCC
45
(TO-220-6L)
75
(I2-PAK-6L)
Internally limited
-25 to +85
-55 to +150
2.0
(GND-Vstr/Vfb=1.5kV)
300
(GND-Vstr/Vfb=225V)
Thermal Impedance
Parameter
Junction-to-Ambient Thermal
Junction-to-Case Thermal
Symbol
θJA(1)
θJC(2)
Package
TO-220F-6L
I2-PAK-6L
TO-220F-6L
I2-PAK-6L
Notes:
1. Free standing with no heat-sink under natural convection.
2. Infinite cooling condition - Refer to the SEMI G30-88.
Value
49.90
30
2.78
1.67
Unit
V
V
ADC
A
A
mJ
A
V
V
W
°C
°C
°C
kV
V
Unit
°C/W
°C/W
4
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]