87N03LT View Datasheet(PDF) - Unspecified
Part Name
Description
Manufacturer
87N03LT Datasheet PDF : 11 Pages
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Philips Semiconductors
N-channel TrenchMOS™ transistor
Logic level FET
Product specification
PHP87N03LT, PHB87N03LT
PHD87N03LT
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS
Continuous source current
(body diode)
ISM
Pulsed source current (body
diode)
VSD
Diode forward voltage
IF = 25 A; VGS = 0 V
IF = 40 A; VGS = 0 V
trr
Reverse recovery time
IF = 20 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge VGS = 0 V; VR = 25 V
MIN. TYP. MAX. UNIT
-
- 75 A
-
- 240 A
- 0.85 1.2 V
- 0.9 -
- 109 - ns
- 0.2 - µC
Normalised Power Derating, PD (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
Normalised Current Derating, ID (%)
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175
Mounting Base temperature, Tmb (C)
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); VGS ≥ 5 V
1000 Peak Pulsed Drain Current, IDM (A)
RDS(on) = VDS/ ID
100
10
D.C.
tp = 10 us
100 us
1 ms
10 ms
100 ms
1
1
10
100
Drain-Source Voltage, VDS (V)
Fig.3. Safe operating area
ID & IDM = f(VDS); IDM single pulse; parameter tp
Transient thermal impedance, Zth j-mb (K/W)
10
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
1E-06
single pulse
1E-05
P
D
1E-04
1E-03
1E-02
Pulse width, tp (s)
D = tp/T
tp
T
1E-01
1E+00
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
October 1999
3
Rev 1.600
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