Y34NB50 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
Y34NB50 Datasheet PDF : 8 Pages
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STY34NB50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
td(on)
tr
P a ram et er
Turn-on Time
Rise Time
Qg
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 250 V
ID = 17 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 400 V ID = 34 A VGS = 10 V
Min.
Typ .
46
32
159
35
67
M a x.
64
45
223
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symb ol
tr(Vo f f)
tf
tc
P a ram et er
Off-voltage Rise Time
Fall Time
Cross-over T ime
Test Conditions
VDD = 400 V
ID = 34 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 5)
Min.
Typ .
56
53
120
M a x.
78
74
168
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
ISD
ISDM (•)
VSD (∗)
trr
Qrr
IRRM
P a ram et er
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Cu r re nt
Test Conditions
ISD = 34 A VGS = 0
ISD = 34 A
VDD = 100 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, figure 5)
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ .
M a x.
34
136
Unit
A
A
1.6
V
950
ns
12
µC
25
A
Safe Operating Area
Thermal Impedance
3/8
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