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STP10NK80ZFP View Datasheet(PDF) - Unspecified

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Description
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STP10NK80ZFP Datasheet PDF : 15 Pages
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Electrical characteristics
STP10NK80ZFP - STP10NK80Z - STW10NK80Z
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
800
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
µA
50 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±10 nA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 100µA
3 3.75 4.5 V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 4.5A
0.78 0.9
Table 5. Dynamic
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15V, ID = 4.5A
9.6
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
2180
pF
205
pF
38
pF
Coss
(2)
eq .
Equivalent output
capacitance
VGS=0, VDS =0V to 640V
105
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=640V, ID = 9A
VGS =10V
(see Figure 19)
72
nC
12.5
nC
37
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
4/15
 

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