Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5271
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
200
V
VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.5A
1.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=2.5A;IB=0.5A
VCB=300V; IE=0
VEB=7V; IC=0
1.5
V
100 μA
100 μA
hFE-1
DC current gain
IC=2.5A ; VCE=2V
10
30
hFE-2
DC current gain
IC=1mA ; VCE=2V
15
fT
Transition frequency
固IN电C半H导AN体GE SEMICONDUTOR COB
Output capacitance
Switching times
ton
Turn-on time
tstg
Storage time
IE=-0.5A ; VCE=12V
VCB=10V;f=1MHz
IC=2.5A;IB1=0.5A;IB2=-1.0A
RL=60Ω;VCC=150V
10
45
0.3
1.0
MHz
pF
μs
μs
tf
Fall time
0.1 μs
2