1SV237 View Datasheet(PDF) - Toshiba

Part Name

Description

Manufacturer

1SV237

VHF ~ UHF BAND RF ATTENUATOR APPLICATIONS

Toshiba 

TOSHIBA Diode Silicon Epitaxial Pin Type

1SV237

1SV237

VHF~UHF Band RF Attenuator Applications

Unit: mm

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Reverse voltage

Forward current

Junction temperature

Storage temperature range

VR

50

V

IF

50

mA

Tj

125

°C

Tstg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Reverse current

Forward voltage

Total capacitance

Series resistance

Symbol

VR

IR

VF

CT

rs

Test Condition

IR = 10 μA

VR = 50 V

IF = 50 mA

VR = 50 V, f = 1 MHz

IF = 10 mA, f = 100 MHz

Marking

JEDEC

―

JEITA

―

TOSHIBA

1-3J1A

Weight: 0.013 g (typ.)

Min Typ. Max Unit

50

⎯

⎯

V

⎯

⎯

0.1

μA

⎯ 0.95 ⎯

V

⎯ 0.25 ⎯

pF

⎯

4

⎯

Ω

1

2007-11-01

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