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STB7NK80Z-1 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STB7NK80Z-1 Datasheet PDF : 17 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220 D2PAK I2PAK TO-220FP
VDS
VGS
ID
ID
IDM (2)
PTOT
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
VESD(G-S)
Gate source ESD
(HBM-C=100 pF, R=1.5 kΩ)
dv/dt (3) Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s; TC= 25 °C)
Tj Max operating junction temperature
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 5.2 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX.
800
± 30
5.2
3.3
20.8
125
1
4000
4.5
5.2 (1)
3.3 (1)
20.8(1)
30
0.24
V
V
A
A
A
W
W/°C
V
V/ns
2500
V
°C
-55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-220 D2PAK I2PAK TO-220FP
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Tl
Maximum lead temperature for soldering
purpose
1
62.5
300
4.2 °C/W
°C/W
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Value
Unit
5.2
A
210
mJ
Doc ID 8979 Rev 6
3/17
 

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