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1SS184 View Datasheet(PDF) - Toshiba

Part Name
Description
Manufacturer
1SS184 Datasheet PDF : 3 Pages
1 2 3
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS184
1SS184
Ultra High Speed Switching Application
Unit: mm
z Small package
: SC-59
z Low forward voltage
: VF (3) = 0.9V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : T = 2.2pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
VRM
VR
IFM
IO
IFSM
P
85
V
80
V
300 (*)
mA
100 (*)
mA
2 (*)
A
150
mW
Junction temperature
Storage temperature
Tj
125
°C
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
EIAJ
TOSHIBA
Weight: 0.012g
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*:
Unit rating. Total rating = Unit rating × 1.5.
TO-236MOD
SC-59
1-3G1E
Electrical Characteristics
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
IF = 1mA
IF = 10mA
IF = 100mA
VR = 30V
VR = 80V
VR = 0, f = 1MHz
IF = 10mA (Fig.1)
Min Typ. Max Unit
0.60
0.72
V
0.90 1.20
0.1
μA
0.5
0.9
3.0
pF
1.6
4.0
ns
Marking
1
2007-11-01
 

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