1SS184(2017) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
1SS184 Datasheet PDF : 4 Pages
| |||
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS184
Ultra High-Speed Switching Applications
AEC-Q101 Qualified (Note1)
Small package: SC-59
Low forward voltage: VF (3) = 0.90 V (typ.)
Fast reverse recovery time: trr = 1.6 ns (typ.)
Small total capacitance: CT = 0.9 pF (typ.)
Note1: For detail information, please contact to our sales.
1SS184
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300*
mA
Average forward current
IO
100*
mA
Surge current (10 ms)
Power dissipation
Junction temperature
Storage temperature
IFSM
P
Tj
Tstg
2*
A
150
mW
125
°C
−55 to 125
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1S
Weight: 12 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5.
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test Condition
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0 V, f = 1 MHz
IF = 10 mA (Fig.1)
Min Typ. Max Unit
― 0.60 ―
― 0.72 ―
V
― 0.90 1.20
―
―
0.1
μA
―
―
0.5
―
0.9
3.0
pF
―
1.6
4.0
ns
Start of commercial production
1982-03
1
2017-10-12
|
|
Share Link: 