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PZT2222A View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
PZT2222A Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
PN2222A
MMBT2222A
PZT2222A
C
C
EBC
TO-92
SOT-23
Mark:1P
E
B
SOT-223
E
C
B
NPN General Purpose Amplifier
• This device is for use as a medium power amplifier and switch
requiring collector currents up to 500mA.
• Sourced from process 19.
Absolute Maximum Ratings * Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Value
40
75
6.0
1.0
- 55 ~ 150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
V
V
A
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BV(BR)CEO
BV(BR)CBO
BV(BR)EBO
ICEX
ICBO
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IBL
Base Cutoff Current
On Characteristics
IC = 10mA, IB = 0
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCE = 60V, VEB(off) = 3.0V
VCB = 60V, IE = 0
VCB = 60V, IE = 0, Ta = 125°C
VEB = 3.0V, IC = 0
VCE = 60V, VEB(off) = 3.0V
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage *
VBE(sat)
Base-Emitter Saturation Voltage *
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
IC = 0.1mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 10mA, VCE = 10V, Ta = -55°C
IC = 150mA, VCE = 10V *
IC = 150mA, VCE = 10V *
IC = 500mA, VCE = 10V *
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
Min. Max. Units
40
V
75
V
6.0
V
10
nA
0.01 µA
10
µA
10
µA
20
µA
35
50
75
35
100 300
50
40
0.3
V
1.0
V
0.6
1.2
V
2.0
V
©2004 Fairchild Semiconductor Corporation
Rev. A1, August 2004
 

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