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Part Name
Description
NNCD8.2B View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
Manufacturer
NNCD8.2B
E.S.D NOISE CLIPPING DIODES
NEC => Renesas Technology
NNCD8.2B Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
NNCD3.3B to NNCD12B
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
Type Number
Breakdown Voltage
Note 1
V
BR
(V)
Dynamic
Impedance
Note 2
Zz (
Ω
)
Reverse Leakage
I
R
(
µ
A)
MIN. MAX. I
T
(mA) MAX. I
T
(mA) MAX. V
R
(V)
NNCD3.3B
3.16 3.53
20
70
20
20
1.0
NNCD3.6B
3.47 3.83
20
60
20
10
1.0
NNCD3.9B
3.77 4.14
20
50
20
5
1.0
NNCD4.3B
4.05 4.53
20
40
20
5
1.0
NNCD4.7B
4.47 4.91
20
25
20
5
1.0
NNCD5.1B
4.85 5.35
20
20
20
5
1.5
NNCD5.6B
5.29 5.88
20
13
20
5
2.5
NNCD6.2B
5.81 6.40
20
10
20
5
3.0
NNCD6.8B
6.32 6.97
20
8
20
2
3.5
NNCD7.5B
6.88 7.64
20
8
20
0.5
4.0
NNCD8.2B
7.56 8.41
20
8
20
0.5
5.0
NNCD9.1B
8.33 9.29
20
8
20
0.5
6.0
NNCD10B
9.19 10.3
20
8
20
0.2
7.0
NNCD11B
10.18 11.26
10
10
10
0.2
8.0
NNCD12B
11.13 12.30
10
10
10
0.2
9.0
Capacitance
C
t
(pF)
TYP.
240
230
220
210
190
160
140
120
110
90
90
90
80
70
70
TEST
CONDITION
V
R
= 0 V
f = 1 MHz
E.S.D Voltage
(kV)
MIN.
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
TEST
CONDITION
C = 150 pF
R = 330
Ω
(IEC1000
-4-2)
Notes 1.
Tested with pulse (40 ms)
2.
Zz is measured at I
T
give a small A.C. signal.
2
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