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NNCD6.2B View Datasheet(PDF) - NEC => Renesas Technology

Part NameNNCD6.2B NEC
NEC => Renesas Technology NEC
DescriptionE.S.D NOISE CLIPPING DIODES


NNCD6.2B Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NNCD3.3B to NNCD12B
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Type Number
Breakdown VoltageNote 1
VBR (V)
Dynamic
ImpedanceNote 2
Zz ()
Reverse Leakage
IR (µA)
MIN. MAX. IT (mA) MAX. IT (mA) MAX. VR (V)
NNCD3.3B
3.16 3.53
20
70
20
20
1.0
NNCD3.6B
3.47 3.83
20
60
20
10
1.0
NNCD3.9B
3.77 4.14
20
50
20
5
1.0
NNCD4.3B
4.05 4.53
20
40
20
5
1.0
NNCD4.7B
4.47 4.91
20
25
20
5
1.0
NNCD5.1B
4.85 5.35
20
20
20
5
1.5
NNCD5.6B
5.29 5.88
20
13
20
5
2.5
NNCD6.2B
5.81 6.40
20
10
20
5
3.0
NNCD6.8B
6.32 6.97
20
8
20
2
3.5
NNCD7.5B
6.88 7.64
20
8
20
0.5
4.0
NNCD8.2B
7.56 8.41
20
8
20
0.5
5.0
NNCD9.1B
8.33 9.29
20
8
20
0.5
6.0
NNCD10B
9.19 10.3
20
8
20
0.2
7.0
NNCD11B
10.18 11.26
10
10
10
0.2
8.0
NNCD12B
11.13 12.30
10
10
10
0.2
9.0
Capacitance
Ct (pF)
TYP.
240
230
220
210
190
160
140
120
110
90
90
90
80
70
70
TEST
CONDITION
VR = 0 V
f = 1 MHz
E.S.D Voltage
(kV)
MIN.
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
TEST
CONDITION
C = 150 pF
R = 330
(IEC1000
-4-2)
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT give a small A.C. signal.
2
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ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (500 mW TYPE)

This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV.

FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves a series over a wide range (15 product name lined up).
• DHD (Double Heatsink Diode) construction.

APPLICATIONS
• Circuit E.S.D protection.
• Circuits for Waveform clipper, Surge absorber.

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