P4C422-25FMB View Datasheet(PDF) - Performance Semiconductor

Part Name

Description

Manufacturer

P4C422-25FMB

HIGH SPEED 256 x 4 STATIC CMOS RAM

Performance Semiconductor 

P4C422

MAXIMUM RATINGS(1)

Symbol

Parameter

VCC

Power Supply Pin with

Respect to GND

VTERM

Terminal Voltage with

Respect to GND

(up to 7.0V)

TA

Operating Temperature

Value Unit

– 0.5 to +7 V

– 0.5 to

VCC +0.5

V

– 55 to +125 °C

RECOMMENDED OPERATING CONDITIONS

Grade (2)

Commercial

Military

Ambient Temp

0°C to 70°C

–55°C to 125°C

Gnd Vcc

0V 5.0V ±10%

0V 5.0V ±10%

Symbol Parameter

TBIAS

Temperature Under

Bias

TSTG

Storage Temperature

I OUT

DC Output Current

Value Unit

– 55 to +125 °C

– 65 to +150 °C

20

mA

CAPACITANCES(4)

(V = 5.0V, T = 25°C, f = 1.0MHz)

CC

A

Symbol Parameter

Conditions Typ. Unit

CIN

COUT

Input Capacitance VIN = 0V

Output Capacitance VOUT = 0V

5 pF

7 pF

DC ELECTRICAL CHARACTERISTICS

Over recommended operating temperature and supply voltage(2)

Symbol

Parameter

Test Conditions

VOH

Output High Voltage

IOH = –5.2 mA, VCC = Min.2.4

VOL

Output Low Voltage

IOL = +8 mA, VCC = Min.

VIH

Input High Voltage

VIL

Input Low Voltage

V

Input Clamp Diode Voltage I = –10 mA

CL

IN

I

Input Load Current

IX

GND ≤

V

IN

≤

V

CC

I OZ

Output Current (High Z)

VOL ≤ VOUT ≤ VOH , Output Disabled

I OS

Output Short Circuit

Current(3)

VCC= Max., VOUT = GND

P4C422

Unit

Min

Max

V

0.4

V

2.1

V

0.8

V

–1.5

V

–10

10

µA

–10

10

µA

90

mA

POWER DISSIPATION CHARACTERISTICS VS. SPEED

Symbol

Parameter

ICC

Dynamic Operating Current

Temperature

Range

Commercial

Military

-10 -12 -15 -20 -25 -35 Unit

90 90 90 90 65 65 mA

N/A N/A 90 90 90 90 mA

Notes:

1. Stresses greater than those listed under MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification

is not implied. Exposure to MAXIMUM rating conditions for extended

periods may affect reliability.

2. Extended temperature operation guaranteed with 400 linear feet per

minute of air flow.

3. For test purposes, not more than one output at a time should be

shorted. Short circuit test duration should not exceed 30 seconds.

4. This parameter is sampled and not 100% tested.

5. Transition time is ≤ 3ns for 10, 12, and 15 ns products and ≤ 5ns for

20, 25, and 35 ns products, see Fig 1d. Timing is referenced at input

and output levels of 1.5V. The output loading is equivalent to the

specified IOL/IOH with a load capacitance of 15 pF (10, 12) or 30 pF (15,

20, 25, 35) as in Fig. 1a and 1b respectively.

6. Transition time is ≤ 3ns for 10, 12, and 15 ns products and ≤ 5ns for

20, 25, and 35 ns products, see Fig 1d. Transition is measured at

steady state HIGH level -500mV or steady state LOW level +500mV

on the output from a level on the input with load shown in Fig. 1c.

7. tW is measured at tWSA = min.; tWSA is measured at tW = min.

Document # SRAM101 REV. A

Page 2 of 10

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