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P4C422-12CC View Datasheet(PDF) - Performance Semiconductor

Part NameDescriptionManufacturer
P4C422-12CC HIGH SPEED 256 x 4 STATIC CMOS RAM Performance-Semiconductor
Performance Semiconductor Performance-Semiconductor
P4C422-12CC Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
P4C422
MAXIMUM RATINGS(1)
Symbol
Parameter
VCC
Power Supply Pin with
Respect to GND
VTERM
Terminal Voltage with
Respect to GND
(up to 7.0V)
TA
Operating Temperature
Value Unit
– 0.5 to +7 V
– 0.5 to
VCC +0.5
V
– 55 to +125 °C
RECOMMENDED OPERATING CONDITIONS
Grade (2)
Commercial
Military
Ambient Temp
0°C to 70°C
–55°C to 125°C
Gnd Vcc
0V 5.0V ±10%
0V 5.0V ±10%
Symbol Parameter
TBIAS
Temperature Under
Bias
TSTG
Storage Temperature
I OUT
DC Output Current
Value Unit
– 55 to +125 °C
– 65 to +150 °C
20
mA
CAPACITANCES(4)
(V = 5.0V, T = 25°C, f = 1.0MHz)
CC
A
Symbol Parameter
Conditions Typ. Unit
CIN
COUT
Input Capacitance VIN = 0V
Output Capacitance VOUT = 0V
5 pF
7 pF
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
Symbol
Parameter
Test Conditions
VOH
Output High Voltage
IOH = –5.2 mA, VCC = Min.2.4
VOL
Output Low Voltage
IOL = +8 mA, VCC = Min.
VIH
Input High Voltage
VIL
Input Low Voltage
V
Input Clamp Diode Voltage I = –10 mA
CL
IN
I
Input Load Current
IX
GND
V
IN
V
CC
I OZ
Output Current (High Z)
VOL VOUT VOH , Output Disabled
I OS
Output Short Circuit
Current(3)
VCC= Max., VOUT = GND
P4C422
Unit
Min
Max
V
0.4
V
2.1
V
0.8
V
–1.5
V
–10
10
µA
–10
10
µA
90
mA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
ICC
Dynamic Operating Current
Temperature
Range
Commercial
Military
-10 -12 -15 -20 -25 -35 Unit
90 90 90 90 65 65 mA
N/A N/A 90 90 90 90 mA
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. For test purposes, not more than one output at a time should be
shorted. Short circuit test duration should not exceed 30 seconds.
4. This parameter is sampled and not 100% tested.
5. Transition time is 3ns for 10, 12, and 15 ns products and 5ns for
20, 25, and 35 ns products, see Fig 1d. Timing is referenced at input
and output levels of 1.5V. The output loading is equivalent to the
specified IOL/IOH with a load capacitance of 15 pF (10, 12) or 30 pF (15,
20, 25, 35) as in Fig. 1a and 1b respectively.
6. Transition time is 3ns for 10, 12, and 15 ns products and 5ns for
20, 25, and 35 ns products, see Fig 1d. Transition is measured at
steady state HIGH level -500mV or steady state LOW level +500mV
on the output from a level on the input with load shown in Fig. 1c.
7. tW is measured at tWSA = min.; tWSA is measured at tW = min.
Document # SRAM101 REV. A
Page 2 of 10
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