HGTP7N60C3D View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

HGTP7N60C3D

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Fairchild Semiconductor 

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to

gate-insulation damage by the electrostatic discharge of

energy through the devices. When handling these devices,

care should be exercised to assure that the static charge

built in the handler’s body capacitance is not discharged

through the device. With proper handling and application

procedures, however, IGBTs are currently being extensively

used in production by numerous equipment manufacturers

in military, industrial and consumer applications, with

virtually no damage problems due to electrostatic discharge.

IGBTs can be handled safely if the following basic

precautions are taken:

Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shorting springs

or by the insertion into conductive material such as

ECCOSORBD™ LD26 or equivalent.

When devices are removed by hand from their carriers, the

hand being used should be grounded by any suitable means

- for example, with a metallic wristband.

Tips of soldering irons should be grounded.

Devices should never be inserted into or removed from

circuits with power on.

Gate Voltage Rating - Never exceed the gate-voltage rating

of VGEM. Exceeding the rated VGE can result in permanent

damage to the oxide layer in the gate region.

Gate Termination - The gates of these devices are

essentially capacitors. Circuits that leave the gate open-

circuited or floating should be avoided. These conditions can

result in turn-on of the device due to voltage buildup on the

input capacitor due to leakage currents or pickup.

Operating Frequency Information

Operating frequency information for a typical device

(Figure 13) is presented as a guide for estimating device

performance for a specific application. Other typical

frequency vs collector current (ICE) plots are possible using

the information shown for a typical unit in Figures 4, 7, 8, 11

and 12. The operating frequency plot (Figure 13) of a typical

device shows fMAX1 or fMAX2 whichever is smaller at each

point. The information is based on measurements of a

typical device and is bounded by the maximum rated

junction temperature.

fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I + td(ON)I). Deadtime

(the denominator) has been arbitrarily held to 10% of the

on-state time for a 50% duty factor. Other definitions are

possible. td(OFF)I and td(ON)I are defined in Figure 21.

Device turn-off delay can establish an additional frequency

limiting condition for an application other than TJM . td(OFF)I is

important when controlling output ripple under a lightly

loaded condition.

fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The

allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.

The sum of device switching and conduction losses must

not exceed PD . A 50% duty factor was used (Figure 13)

and the conduction losses (PC) are approximated by

PC = (VCE x ICE)/2.

EON and EOFF are defined in the switching waveforms

shown in Figure 21. EON is the integral of the instantaneous

power loss (ICE x VCE) during turn-on and EOFF is the

integral of the instantaneous power loss during turn-off. All

tail losses are included in the calculation for EOFF; i.e. the

collector current equals zero (ICE = 0).

Gate Protection - These devices do not have an internal

monolithic zener diode from gate to emitter. If gate

protection is required an external zener is recommended.

8

HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D

Rev. B 1

www.fairchildsemi.com

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