HGTP14N40F3VL View Datasheet(PDF) - Intersil
Part Name
Description
Manufacturer
HGTP14N40F3VL Datasheet PDF : 5 Pages
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Test Circuits
HGTP14N40F3VL
2.3mH
VDD
PULSE
GEN
RG
G
C
DUT
E
L = 550µH
1/RG = 1/RGEN + 1/RGE
RGEN = 50Ω
G
C
DUT
5V
RGE = 50Ω
E
+
VCC
- 320V
FIGURE 13. USE TEST CIRCUIT
FIGURE 14. INDUCTIVE SWITCHING TEST CIRCUIT
Handling Precautions for IGBT’s
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBT’s are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBT’s
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “†ECCOSORBD LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in per-
manent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
† Trademark Emerson and Cumming, Inc.
3-54
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