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IRF246 View Datasheet(PDF) - Harris Semiconductor

Part Name
Description
Manufacturer
IRF246 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRF244, IRF245, IRF246, IRF247
Typical Performance Curves Unless Otherwise Specified (Continued)
25
80µs PULSE TEST
20
10V
6.0V
15
5.5V
10
VGS = 5.0V
5
4.5V
4.0V
0
0
2
4
6
8
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
100
VDS 50V
80µs PULSE TEST
10
TJ = 150oC
1
TJ = 25oC
0.1
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.5
80µs PULSE TEST
2.0
1.5
VGS = 10V
3.0
ID = 14A
VGS = 10V
2.4
1.8
1.0
1.2
0.5
VGS = 20V
0.6
0
0
15
30
45
60
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
0
75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
3000
2400
1800
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGD
1200
600
COSS
CRSS
00
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5
 

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