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IRF244 View Datasheet(PDF) - Harris Semiconductor

Part Name
Description
Manufacturer
IRF244 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRF244, IRF245, IRF246, IRF247
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Junction to Case
Junction to Ambient
CISS
COSS
VGS = 0V, VDS = 25V, f = 1.0MHz
(Figure 11)
- 1300 -
pF
- 320 -
pF
CRSS
-
69
-
pF
LD Measured Between Modified MOSFET
- 5.0 -
nH
the Contact Screw on Symbol Showing the
the Flange that is
Internal Devices
Closer to Source and Inductances
Gate Pins and the
D
Center of Die
LD
LS Measured From The
Source Lead, 6mm
G
(0.25in) From the
- 12.5 -
nH
LS
Flange and the
Source Bonding Pad
S
RθJC
RθJA
Free Air Operation
-
-
1.0 oC/W
-
-
30 oC/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
ISD
Modified MOSFET
Symbol Showing the
D
ISM
Integral Reverse
P-N Junction Diode
G
MIN TYP MAX UNITS
-
-
14
A
-
-
56
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
TJ = 25oC, ISD = 14A, VGS = 0V (Figure 13)
-
-
1.8
V
trr
TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs
150 300 640 ns
QRR
TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs
1.6 3.4 7.2 µC
Forward Turn-On Time
tON
Intrinsic Turn-On Time is Negligible, Turn-On -
-
-
-
Speed is Substantially Controlled by LS + LD
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 4.5mH, RG = 25, peak IAS = 14A. See Figures 15, 16.
5-3
 

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