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Z0109MA 데이터 시트보기 (PDF) - NXP Semiconductors.

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Z0109MA 4Q Triac NXP
NXP Semiconductors. NXP
Z0109MA Datasheet PDF : 13 Pages
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NXP Semiconductors
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
VT
on-state voltage
IT = 1 A; Tj = 25 °C; Fig. 10
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C
VD = 600 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
ID
off-state current
VD = 600 V; Tj = 125 °C
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 402 V; Tj = 110 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 12
dVcom/dt
rate of change of
commutating voltage
VD = 400 V; Tj = 110 °C; dIcom/
dt = 0.44 A/ms; IT = 1 A; gate open
circuit
Z0109MA
4Q Triac
Min Typ Max Unit
-
-
10
mA
-
-
10
mA
-
-
10
mA
-
-
10
mA
-
-
15
mA
-
-
25
mA
-
-
15
mA
-
-
15
mA
-
-
10
mA
-
1.3 1.6 V
-
-
1
V
0.2 -
-
V
-
-
0.5 mA
50
-
-
V/µs
2
-
-
V/µs
Z0109MA
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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