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BTA08-600CRG View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
BTA08-600CRG Snubberless™, logic level and standard 8 A Triacs ST-Microelectronics
STMicroelectronics ST-Microelectronics
BTA08-600CRG Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Characteristics
1
Characteristics
BTA08, BTB08 and T8 Series
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
IT(RMS)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
On-state rms current (full sine wave)
Non repetitive surge peak on-state current
(full cycle, Tj initial = 25 °C)
I²t value for fusing
Critical rate of rise of on-state current IG = 2
x IGT ,
tr 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
IPAK/D2PAK/DPAK/
TO-220AB
Tc = 110 °C
TO-220AB Ins.
F = 50 Hz
Tc = 100 °C
t = 20 ms
F = 60 Hz
t = 16.7 ms
tp = 10 ms
F = 120 Hz
Tj = 125 °C
tp = 20 µs
Tj = 125 °C
Tj = 125 °C
8
80
84
36
50
4
1
- 40 to + 150
- 40 to + 125
Unit
A
A
A²s
A/µs
A
W
°C
Table 2.
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Snubberless and logic level (3 quadrants)
Symbol
Test conditions
Quadrant
T8
BTA08 / BTB08
T810 T835 TW SW CW BW
IGT (1)
VGT
VGD
IH (2)
VD = 12 V RL = 30 Ω
VD = VDRM RL = 3.3 kΩ
Tj = 125 °C
IT = 100 mA
IL
IG = 1.2 IGT
I - II - III
I - II - III
I - II - III
I - III
II
MAX. 10 35
MAX.
5 10 35 50
1.3
MIN.
0.2
MAX. 15 35 10 15 35 50
25 50 10 25 50 70
MAX.
30 60 15 30 60 80
dV/dt (2)
VD = 67 %VDRM gate open
Tj = 125 °C
(dV/dt)c = 0.1 V/µs Tj = 125 °C
(dI/dt)c
(2)
(dV/dt)c = 10 V/µs
Tj = 125 °C
Without snubber Tj = 125 °C
MIN.
MIN.
40 400 20 40 400 1000
5.4 - 3.5 5.4 -
-
2.8 - 1.5 2.98 -
-
- 4.5 -
- 4.5 7
Unit
mA
V
V
mA
mA
V/µs
A/ms
2/12
Doc ID 7472 Rev 7
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