STD20N06-1 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STD20N06-1 Datasheet PDF : 10 Pages
| |||
STD20N06
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.5
oC/ W
Rthj-amb Thermal Resistance Junction-ambient
Max
100
oC/ W
Rthj-amb Thermal Resistance Case-sink
Typ
1.5
oC/ W
Tl
Maximum Lead Temperature For Soldering Purpose
300
oC
AVALANCHE CHARACTERISTICS
Symb ol
Pa ra met er
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, L = 330 µH, VDD = 25 V)
(see waveforms, figure 2)
EAR Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
IAR Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
Max Value
20
80
20
14
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VG S = 0
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
IG SS
Gate-body Leakage
Current (VD S = 0)
VGS = ± 20 V
Min.
60
Typ.
Max.
Unit
V
250
µA
1000 µA
± 100 nA
ON (∗)
Symb ol
VG S(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 10 A
R esist anc e
VGS = 10V ID = 10 A Tc = 100 oC
On St ate Drain Current VDS > ID( on) x RD S(on) max
VGS = 10 V
Min.
2
20
Typ.
3
0. 02 6
Max.
4
0. 03
0. 06
Unit
V
Ω
Ω
A
DYNAMIC
Symb ol
gfs (∗)
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID( on) x RD S(on) max ID = 10 A
VDS = 25 V f = 1 MHz VG S = 0
Min.
11
Typ.
16
Max.
Unit
S
2000 2800 pF
350 450
pF
80
120
pF
2/10
|
|
Share Link: 