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STD20N06 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STD20N06 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
STD20N06
N - CHANNEL ENHANCEMENT MODE
”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
TYPE
STD20N06
VDSS
60 V
R DS( on)
< 0.03
ID
20 A (*)
s TYPICAL RDS(on) = 0.026
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s HIGH dV/dt RUGGEDNESS
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
DESCRIPTION
This series of POWER MOSFETS represents the
latest development in low voltage technology.
The ultra high cell density process (UHD) produ-
ced with fine geometries on advanced equipment
gives the device extremely low RDS(on) as well as
good switching performance and high avalanche
energy capability.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s POWER MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
PRELIMINARY DATA
3
2
1
IPAK
TO-251
(Suffix ”-1”)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID
Drain Current (continuous) at T c = 25 oC
ID
Drain Current (continuous) at T c = 100 oC
ID M()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(*) Current limited by the package
() Pulse width limited by safe operating area (*)
Value
60
60
± 20
20
14
80
60
0.4
-65 to 175
175
Unit
V
V
V
A
A
A
W
W /o C
oC
oC
March 1995
1/10
 

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