Philips Semiconductors
Zero-voltage-switching
resonant converter controller
Product specification
TEA1610P; TEA1610T
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCF(L)
VCF(H)
VCf(p-p)
tdt
CF trip level LOW
CF trip level HIGH
Cf voltage (peak-to-peak value)
dead time
DC level
DC level
Cf = 100 pF; IIFS = 0.5 mA;
IIRS = 50 µA
−
1.27 −
V
−
3.0 −
V
1.63 1.73 1.83 V
0.37 0.40 0.43 µs
Output drivers
IGH(source) high side output source current
IGH(sink)
high side output sink current
IGL(source)
IGL(sink)
VGH(H)
low side output source current
low side output sink current
high side output voltage HIGH
VGH(L)
high side output voltage LOW
VGL(H)
VGL(L)
Vd(boot)
low side output voltage HIGH
low side output voltage LOW
bootstrap diode voltage drop
VDD(F) = 13 V; VSH = 0; VGH = 0 −135 −180 −225 mA
VDD(F) = 13 V; VSH = 0;
VGH = 13 V
−
300 −
mA
VGL = 0
−135 −180 −225 mA
VGL = 14 V
−
300 −
mA
VDD(F) = 13 V; VSH = 0;
IGH = 10 mA
10.8 12
−
V
VDD(F) = 13 V; VSH = 0;
IGH = 10 mA
−
0.2 0.5 V
IGL = 10 mA
10.8 12
−
V
IGL = 10 mA
−
0.2 0.5 V
I = 5 mA
1.5 1.8 2.1 V
Shut-down input pin SD
ISD
VSD(th)
input current
threshold level
VSD = 2.33 V
0
0.2 0.5 µA
2.26 2.33 2.40 V
Error amplifier pins I+, I−, VCO
II(CM)
VI(CM)
VI(offset)
gm
Ao
GB
VVCO(max)
IVCO(max)
VVCO(start)
common mode input current
common mode input voltage
input offset voltage
transconductance
open loop gain
gain bandwidth product
maximum output voltage
maximum output current
output voltage during start-up
VI(CM) = 1 V
−
−
VI(CM) = 1 V; IVCO = −10 mA
−2
VI(CM) = 1 V; source only
−
RL = 10 kΩ to GND; VI(CM) = 1 V −
RL = 10 kΩ to GND; VI(CM) = 1 V −
operating; RL = 10 kΩ to GND 3.2
operating; VVCO = 1 V
−0.4
IVCO = 0.3 mA
2.30
−0.1
−
0
330
70
5
3.6
−0.5
2.50
−0.5
2.5
+2
−
−
−
4.0
−0.6
2.70
µA
V
mV
µA/mV
dB
MHz
V
mA
V
Notes
1. Supply current IDD will increase with increasing bridge frequency to drive the capacitive load of two MOSFETs.
Typical MOSFETs for the TEA1610 application are 8N50 (Philips type PHX80N50E, Qg(tot) = 55 nC typ.) and these
will increase the supply current at 150 kHz according to the following formula:
∆IDD = 2 × Qg(tot) × fbridge = 2 × 55 nC × 150 kHz = 16.5 mA.
2. The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak voltage swing VCF and the
charge/discharge currents ICF(ch) and ICF(dis).
2001 Apr 25
11