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MJE18009 View Datasheet(PDF) - ON Semiconductor

Part NameMJE18009 ON-Semiconductor
ON Semiconductor ON-Semiconductor
DescriptionSWITCHMODE™ NPN Silicon Planar Power Transistor
MJE18009 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
MJE18009 MJF18009
1.0
SECOND
0.8
BREAKDOWN
DERATING
0.6
0.4
0.2
THERMAL
DERATING
0
20 40
60
80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 17. Forward Bias Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC–VCE
limits of the transistor that must be observed for reliable op-
eration; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 15
is based on TC = 25°C; TJ(pk) is variable depending on
power level. Second breakdown pulse limits are valid for
duty cycles to 10% but must be derated when TC > 25°C. Se-
cond breakdown limitations do not derate the same as ther-
mal limitations. Allowable current at the voltages shown on
Figure 15 may be found at any case temperature by using the
appropriate curve on Figure 17.
TJ(pk) may be calculated from the data in Figures 20 and
21. At any case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown. For inductive
loads, high voltage and current must be sustained simulta-
neously during turn–off with the base–to–emitter junction
reverse biased. The safe level is specified as a reverse–
biased safe operating area (Figure 16). This rating is veri-
fied under clamped conditions so that the device is never
subjected to an avalanche mode.
TYPICAL SWITCHING CHARACTERISTICS
(IB = IC/2 FOR ALL CURVES)
VCE
dyn 1 µs
0V
dyn 3 µs
90% IB
1 µs
IB
3 µs
TIME
Figure 18. Dynamic Saturation
Voltage Measurements
10
9
IC
8
7
6
5
Vclamp
4
3
IB
2
1
0
0
1
tsi
10% Vclamp
90% IB1
2
3
4
TIME
90% IC
tfi
10% IC
tc
5
6
7
8
Figure 19. Inductive Switching Measurements
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