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MJE18009 View Datasheet(PDF) - ON Semiconductor

Part NameDescriptionManufacturer
MJE18009 SWITCHMODE™ NPN Silicon Planar Power Transistor ON-Semiconductor
ON Semiconductor ON-Semiconductor
MJE18009 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
MJE18009 MJF18009
TYPICAL SWITCHING CHARACTERISTICS
160
400
IC = 3 A
TJ = 125°C
140
TJ = 25°C
IC = 3 A
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
120
300
100
80
IBoff = IC/2
60
VCC = 15 V
VZ = 300 V
40 LC = 200 µH
34 5 6
IC = 6.5 A
7 8 9 10 11 12 13 14 15
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
200
IC = 6.5 A
100
3
TJ = 125°C
TJ = 25°C
5
7
9
11
hFE, FORCED GAIN
13
15
Figure 14. Inductive Crossover Time
100
5 ms 1 ms
10
1
MJE18009-DC
TYPICAL CHARACTERISTICS
12
1 µs
10 µs
EXTENDED
8
SOA
TC 125°C
GAIN 4
LC = 500 µH
4
0.1
-5 V
MJF18009-DC
0.01
10
100
1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
0V
-1.5 V
200
500
800
1100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Switching Safe
Operating Area
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