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MJE18009 View Datasheet(PDF) - ON Semiconductor

Part NameMJE18009 ON-Semiconductor
ON Semiconductor ON-Semiconductor
DescriptionSWITCHMODE™ NPN Silicon Planar Power Transistor
MJE18009 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
100
TJ = 125°C
10
TJ = -ā20°C
MJE18009 MJF18009
TYPICAL STATIC CHARACTERISTICS
VCE = 1 V
TJ = 25°C
100
TJ = 25°C
TJ = 125°C
10
VCE = 5 V
1
0.01
0.1
1
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
1
0.01
0.1
1
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain @ 5 Volt
2
1
IC = 1 A
8A
5A
3A
TJ = 25°C
0
0.01
0.1
1
10
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
10
IC/IB = 10
1
0.1
0.01
IC/IB = 5
0.01
0.1
TJ = 125°C
TJ = 25°C
1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Collector–Emitter Saturation Voltage
1.1
IC/IB = 5
IC/IB = 10
0.9
TJ = -ā20°C
0.7
TJ = 25°C
0.5
TJ = 125°C
0.3
0.01
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Base–Emitter Saturation Region
10
1
0.1
0.01
1
Cib
TJ = 25°C
f(test) = 1 MHz
Cob
10
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
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