Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
Part Name  

MJE18009 View Datasheet(PDF) - ON Semiconductor

Part NameMJE18009 ON-Semiconductor
ON Semiconductor ON-Semiconductor
DescriptionSWITCHMODE™ NPN Silicon Planar Power Transistor
MJE18009 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
ON Semiconductort
SWITCHMODENPN Silicon
Planar Power Transistor
The MJE/MJF18009 has an application specific state–of–the–art die
designed for use in 220 V line–operated SWITCHMODE Power
supplies and electronic ballast (“light ballast”). These high
voltage/high speed transistors exhibit the following main features:
Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain hFE
Fast Switching
No Coil Required in Base Circuit for Turn–Off (No Current Tail)
Full Characterization at 125_C
ON Semiconductor “6 SIGMA” Philosophy Provides Tight and
Reproducible Parametric Distributions
Specified Dynamic Saturation Data
Two Package Choices: Standard TO–220 or Isolated TO–220
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Breakdown Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ — Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ — Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Total Device Dissipation @ TC = 25°C
*Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Temperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RMS Isolation Voltage (2) Per Figure 22
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1s, 25°C, Humidity 30%) Per Figure 23
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TC = 25°C
Per Figure 24
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance — Junction to Case
— Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum Lead Temperature for Soldering
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Purposes: 1/8from Case for 5 Seconds
Symbol MJE18009 MJF18009 Unit
VCEO
VCES
VCBO
VEBO
IC
ICM
IB
IBM
PD
450
1000
1000
9
10
20
4
8
150
50
1.2
0.4
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watt
W/_C
TJ, Tstg
VISOL1
VISOL2
VISOL3
–65 to 150
_C
4500
V
3500
1500
Symbol MJE18009 MJF18009 Unit
RθJC
RθJA
0.83
62.5
2.5
_C/W
62.5
TL
260
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
(2) Proper strike and creepage distance must be provided.
MJE18009
MJF18009
POWER TRANSISTORS
10 AMPERES
1000 VOLTS
50 and 150 WATTS
CASE 221A–06
TO–220AB
CASE 221D–02
TO–220 FULLPACK
© Semiconductor Components Industries, LLC, 2001
1
April, 2001 – Rev. 2
Publication Order Number:
MJE18009/D
Direct download click here

 

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]