GE28F400B3BC70 View Datasheet(PDF) - Intel

Part Name

Description

Manufacturer

GE28F400B3BC70

3 Volt Advanced Boot Block Flash Memory

Intel 

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

1.0

Introduction

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory

family, which is optimized for low power, portable systems. This family of products features

1.65 V–2.5 V or 2.7 V–3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read,

program, and erase operations. In addition this family is capable of fast programming at 12 V.

Throughout this document, the term “2.7 V” refers to the full voltage range 2.7 V–3.6 V (except

where noted otherwise) and “VPP = 12 V” refers to 12 V ±5%. Section 1.0 and 2.0 provide an

overview of the flash memory family including applications, pinouts and pin descriptions. Section

3.0 describes the memory organization and operation for these products. Sections 4.0 and 5.0

contain the operating specifications. Finally, Sections 6.0 and 7.0 provide ordering and other

reference information.

The 3 Volt Advanced Boot Block flash memory features:

• Enhanced blocking for easy segmentation of code and data or additional design flexibility

• Program Suspend to Read command

• VCCQ input of 1.65 V–2.5 V on all I/Os. See Figures 1 through 4 for pinout diagrams and

VCCQ location

• Maximum program and erase time specification for improved data storage.

Table 1. 3 Volt Advanced Boot Block Feature Summary

Feature

28F004B3(2), 28F008B3,

28F016B3

28F400B3(2), 28F800B3,

28F160B3, 28F320B3(3),

28F640B3

VCC Read Voltage

2.7 V– 3.6 V

VCCQ I/O Voltage

VPP Program/Erase Voltage

Bus Width

Speed

Memory Arrangement

Blocking (top or bottom)

Locking

Operating Temperature

Program/Erase Cycling

Packages

1.65 V–2.5 V or 2.7 V– 3.6 V

2.7 V– 3.6 V or 11.4 V– 12.6 V

8 bit

16 bit

70 ns, 80 ns, 90 ns, 100 ns, 110 ns

512 Kbit x 8 (4 Mbit)

1024 Kbit x 8 (8 Mbit),

2048 Kbit x 8 (16 Mbit)

256 Kbit x 16 (4 Mbit),

512 Kbit x 16 (8 Mbit),

1024 Kbit x 16 (16 Mbit),

2048 Kbit x 16 (32 Mbit),

4096 Kbit x 16 (64 Mbit)

Eight 8-Kbyte parameter blocks and

Seven 64-Kbyte blocks (4 Mbit) or

Fifteen 64-Kbyte blocks (8 Mbit) or

Thirty-one 64-Kbyte main blocks (16 Mbit)

Sixty-three 64-Kbyte main blocks (32 Mbit)

One hundred twenty-seven 64-Kbyte main blocks (64 Mbit)

WP# locks/unlocks parameter blocks

All other blocks protected using VPP

Extended: –40 °C to +85 °C

100,000 cycles

40-lead TSOP(1),

48-Ball µBGA* CSP(2)

48-Lead TSOP,

48-Ball µBGA CSP(2),

48-Ball VF BGA(4)

NOTES:

1. 32-Mbit and 64-Mbit densities not available in 40-lead TSOP.

2. 4-Mbit density not available in µBGA* CSP.

3. VCCMax is 3.3 V on 0.25µm 32-Mbit devices.

4. 4- and 64-Mbit densities not available on 48-Ball VF BGA.

Reference

Section 4.2,

Section 4.4

Section 4.2, 4.4

Section 4.2, 4.4

Table 3

Section 4.5

Section 2.2

Section 2.2

Appendix C

Section 3.3

Table 8

Section 4.2, 4.4

Section 4.2, 4.4

Figure 3, Figure 4

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