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GE28F320B3TC110 View Datasheet(PDF) - Intel

Part NameGE28F320B3TC110 Intel
Intel Intel
DescriptionSmart 3 advanced boot block 8-Mbit flash memory family. Access speed 110 ns
GE28F320B3TC110 Datasheet PDF : 58 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
1.0
Introduction
This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory
family, which is optimized for low power, portable systems. This family of products features
1.65 V–2.5 V or 2.7 V–3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read,
program, and erase operations. In addition this family is capable of fast programming at 12 V.
Throughout this document, the term “2.7 V” refers to the full voltage range 2.7 V–3.6 V (except
where noted otherwise) and “VPP = 12 V” refers to 12 V ±5%. Section 1.0 and 2.0 provide an
overview of the flash memory family including applications, pinouts and pin descriptions. Section
3.0 describes the memory organization and operation for these products. Sections 4.0 and 5.0
contain the operating specifications. Finally, Sections 6.0 and 7.0 provide ordering and other
reference information.
The 3 Volt Advanced Boot Block flash memory features:
Enhanced blocking for easy segmentation of code and data or additional design flexibility
Program Suspend to Read command
VCCQ input of 1.65 V–2.5 V on all I/Os. See Figures 1 through 4 for pinout diagrams and
VCCQ location
Maximum program and erase time specification for improved data storage.
Table 1. 3 Volt Advanced Boot Block Feature Summary
Feature
28F004B3(2), 28F008B3,
28F016B3
28F400B3(2), 28F800B3,
28F160B3, 28F320B3(3),
28F640B3
VCC Read Voltage
2.7 V– 3.6 V
VCCQ I/O Voltage
VPP Program/Erase Voltage
Bus Width
Speed
Memory Arrangement
Blocking (top or bottom)
Locking
Operating Temperature
Program/Erase Cycling
Packages
1.65 V–2.5 V or 2.7 V– 3.6 V
2.7 V– 3.6 V or 11.4 V– 12.6 V
8 bit
16 bit
70 ns, 80 ns, 90 ns, 100 ns, 110 ns
512 Kbit x 8 (4 Mbit)
1024 Kbit x 8 (8 Mbit),
2048 Kbit x 8 (16 Mbit)
256 Kbit x 16 (4 Mbit),
512 Kbit x 16 (8 Mbit),
1024 Kbit x 16 (16 Mbit),
2048 Kbit x 16 (32 Mbit),
4096 Kbit x 16 (64 Mbit)
Eight 8-Kbyte parameter blocks and
Seven 64-Kbyte blocks (4 Mbit) or
Fifteen 64-Kbyte blocks (8 Mbit) or
Thirty-one 64-Kbyte main blocks (16 Mbit)
Sixty-three 64-Kbyte main blocks (32 Mbit)
One hundred twenty-seven 64-Kbyte main blocks (64 Mbit)
WP# locks/unlocks parameter blocks
All other blocks protected using VPP
Extended: –40 °C to +85 °C
100,000 cycles
40-lead TSOP(1),
48-Ball µBGA* CSP(2)
48-Lead TSOP,
48-Ball µBGA CSP(2),
48-Ball VF BGA(4)
NOTES:
1. 32-Mbit and 64-Mbit densities not available in 40-lead TSOP.
2. 4-Mbit density not available in µBGA* CSP.
3. VCCMax is 3.3 V on 0.25µm 32-Mbit devices.
4. 4- and 64-Mbit densities not available on 48-Ball VF BGA.
Reference
Section 4.2,
Section 4.4
Section 4.2, 4.4
Section 4.2, 4.4
Table 3
Section 4.5
Section 2.2
Section 2.2
Appendix C
Section 3.3
Table 8
Section 4.2, 4.4
Section 4.2, 4.4
Figure 3, Figure 4
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