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GE28F640B3B110 View Datasheet(PDF) - Intel

Part NameGE28F640B3B110 Intel
Intel Intel
Description3 Volt Advanced Boot Block Flash Memory
GE28F640B3B110 Datasheet PDF : 58 Pages
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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Table 3. Bus Operations(1)
Mode
Read (Array, Status, or Identifier)
Output Disable
Standby
Reset
Write
Note
2–4
2
2
2, 7
2, 5–7
RP#
VIH
VIH
VIH
VIL
VIH
CE#
VIL
VIL
VIH
X
VIL
OE#
VIL
VIH
X
X
VIH
WE#
VIH
VIH
X
X
VIL
DQ0–7
DOUT
High Z
High Z
High Z
DIN
DQ8–15
DOUT
High Z
High Z
High Z
DIN
NOTES:
1. 8-bit devices use only DQ[0:7], 16-bit devices use DQ[0:15].
2. X must be VIL, VIH for control pins and addresses.
3. See DC Characteristics for VPPLK, VPP1, VPP2, VPP3, VPP4 voltages.
4. Manufacturer and device codes may also be accessed in read identifier mode (A1–A21 = 0). See Table 5.
5. Refer to Table 6 for valid DIN during a write operation.
6. To program or erase the lockable blocks, hold WP# at VIH.
7. RP# must be at GND ± 0.2 V to meet the maximum deep power-down current specified.
3.1.1
3.1.2
Read
The flash memory has four read modes available: read array, read identifier, read status and read
query. These modes are accessible independent of the VPP voltage. The appropriate Read Mode
command must be issued to the CUI to enter the corresponding mode. Upon initial device power-
up or after exit from reset, the device automatically defaults to read array mode.
CE# and OE# must be driven active to obtain data at the outputs. CE# is the device selection
control; when active it enables the flash memory device. OE# is the data output control and it
drives the selected memory data onto the I/O bus. For all read modes, WE# and RP# must be at
VIH. Figure 7 illustrates a read cycle.
Output Disable
With OE# at a logic-high level (VIH), the device outputs are disabled. Output pins are placed in a
high-impedance state.
3.1.3
Standby
Deselecting the device by bringing CE# to a logic-high level (VIH) places the device in standby
mode, which substantially reduces device power consumption without any latency for subsequent
read accesses. In standby, outputs are placed in a high-impedance state independent of OE#. If
deselected during program or erase operation, the device continues to consume active power until
the program or erase operation is complete.
3.1.4
Deep Power-Down / Reset
From read mode, RP# at VIL for time tPLPH deselects the memory, places output drivers in a high-
impedance state, and turns off all internal circuits. After return from reset, a time tPHQV is required
until the initial read access outputs are valid. A delay (tPHWL or tPHEL) is required after return from
reset before a write can be initiated. After this wake-up interval, normal operation is restored. The
CUI resets to read array mode, and the status register is set to 80H. This case is shown in
Figure 9A.
8
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