GE28F400B3T70 View Datasheet(PDF) - Intel

Part Name

Description

Manufacturer

GE28F400B3T70

3 Volt Advanced Boot Block Flash Memory

Intel 

28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3

2.2

2.2.1

2.2.2

3.0

3.1

Block Organization

The 3 Volt Advanced Boot Block is an asymmetrically-blocked architecture that enables system

integration of code and data within a single flash device. Each block can be erased independently

of the others up to 100,000 times. For the address locations of each block, see the memory maps in

Appendix C.

Parameter Blocks

The 3 Volt Advanced Boot Block flash memory architecture includes parameter blocks to facilitate

storage of frequently updated small parameters (e.g., data that would normally be stored in an

EEPROM). By using software techniques, the word-rewrite functionality of EEPROMs can be

emulated. Each device contains eight parameter blocks of 8-Kbytes/4-Kwords (8192 bytes/4,096

words) each.

Main Blocks

After the parameter blocks, the remainder of the array is divided into equal size main blocks

(65,536 bytes/32,768 words) for data or code storage. The 4-Mbit device contains seven main

blocks; 8-Mbit device contains fifteen main blocks; 16-Mbit flash has thirty-one main blocks;

32-Mbit has sixty-three main blocks; 64-Mbit has one hundred twenty-seven main blocks.

Principles of Operation

Flash memory combines EEPROM functionality with in-circuit electrical program and erase

capability. The 3 Volt Advanced Boot Block flash memory family utilizes a Command User

Interface (CUI) and automated algorithms to simplify program and erase operations. The CUI

allows for 100% CMOS-level control inputs and fixed power supplies during erasure and

programming.

When VPP < VPPLK, the device will only execute the following commands successfully: Read

Array, Read Status Register, Clear Status Register and Read Identifier. The device provides

standard EEPROM read, standby and output disable operations. Manufacturer identification and

device identification data can be accessed through the CUI. All functions associated with altering

memory contents, namely program and erase, are accessible via the CUI. The internal Write State

Machine (WSM) completely automates program and erase operations while the CUI signals the

start of an operation and the status register reports status. The CUI handles the WE# interface to the

data and address latches, as well as system status requests during WSM operation.

Bus Operation

3 Volt Advanced Boot Block flash memory devices read, program and erase in-system via the local

CPU or microcontroller. All bus cycles to or from the flash memory conform to standard micro-

controller bus cycles. Four control pins dictate the data flow in and out of the flash component:

CE#, OE#, WE# and RP#. These bus operations are summarized in Table 3.

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7

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