A1052D View Datasheet(PDF) - Renesas Electronics

Part Name

Description

Manufacturer

A1052D

Silicon PNP Epitaxial

Renesas Electronics 

2SA1052

Electrical Characteristics

Item

Symbol Min

Collector to base breakdown voltage

V(BR)CBO

–30

Collector to emitter breakdown voltage V(BR)CEO –30

Emitter to base breakdown voltage

V(BR)EBO

–5

Collector cutoff current

ICBO

—

Emitter cutoff current

DC current transfer ratio

IEBO

—

hFE*1

160

Collector to emitter saturation voltage

VCE(sat)

—

Base to emitter voltage

VBE

—

Note: 1. The 2SA1052 is grouped by hFE as follows.

Grade

C

D

Mark

MC

MD

hFE

160 to 320 250 to 500

(Ta = 25°C)

Typ Max Unit

Test conditions

—

—

V IC = –10 µA, IE = 0

—

—

V IC = –1 mA, RBE = ∞

—

—

V IE = –10 µA, IC = 0

—

–0.5

µA VCB = –20 V, IE = 0

—

–0.5

µA VEB = –2 V, IC = 0

—

500

VCE = –12 V, IC = –2 mA

— –0.2

V IC = –10 mA, IB = –1 mA

— –0.75

V VCE = –12 V, IC = –2 mA

Rev.3.00 Aug 10, 2005 page 2 of 5

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