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FC803 View Datasheet(PDF) - SANYO -> Panasonic

Part Name
Description
Manufacturer
FC803 Datasheet PDF : 2 Pages
1 2
Ordering number :EN3193A
FC803
Silicon Schottky Barrier Diode
30V, 70mA Rectifier
Features
· Low forward voltage (VF max=0.55V) .
· Fast reverse recorvery time (trr max=10ns) .
· Composite type with 4 diodes contained in the CP
package currently in use, improving the mounting
efficiency greatly.
· The FC803 is formed with twi chips, each being
equivalent to the SB007W03C, placed in one
package.
Package Dimensions
unit:mm
1233A
[FC803]
1:Anode
2:Anode
3:Cathode
4:Anode
5:Anode
6:Cathode
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50MHz sine wave, 1 cycle
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Reverse Voltage
Forward Voltage
Reverse Current
Interteminal Capacitance
Reverse Recovery Time
VR
IR=20µA
VF
IF=70mA
IR
VR=15V
C
VR=10V, f=1MHz
trr
IF=IR= (–) 10mA, See specified Test Circuit
Note) The specifications shown above are for each individual diode.
· Marking:803
trr Test Circuit
Electrical Connection
SANYO:CP6
Ratings
Unit
30
V
35
V
70 mA
2
A
–55 to +125 ˚C
–55 to +125 ˚C
Ratings
Unit
min
typ
max
30
V
0.55 V
5 µA
3.0
pF
10 ns
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22898HA (KT)/53196GI (KOTO) /O259MO, TS No.3193-1/2
 

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