NTE47 View Datasheet(PDF) - NTE Electronics
Part Name
Description
Manufacturer
NTE47 Datasheet PDF : 2 Pages
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NTE47
Silicon NPN Transistor
High Gain, Low Noise Amp
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/W
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/W
Note 1 RthJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Colletor–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
ON Characteristics (Note 2)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IC = 10mA, IB = 0, Note 2
IC = 100µA, IE = 0
IE = 10µA, IC = 0
VCB = 30V, IE = 0
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
hFE
VCE(sat)
VBE(on)
VCE = 5V, IC = 10µA
VCE = 5V, IC = 100µA
VCE = 5V, IC = 1mA
VCE = 5V, IC = 10mA
IC = 10mA, IB = 0.5mA
IC = 50mA, IB = 0.5mA
VCE = 5V, IC = 1mA
Min Typ Max Unit
45 –
–
V
45 –
–
V
6.5 –
–
V
– 1.0 50 nA
400 580 –
500 850 –
500 1100 –
500 1150 –
–
– 0.2 V
– 0.08 0.3 V
– 0.6 0.7 V
Note 2 Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
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