BTA/BTB12-XXXCW View Datasheet(PDF) - STMicroelectronics
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BTA/BTB12-XXXCW Datasheet PDF : 7 Pages
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BTA/BTB12 and T12 Series
Fig. 4: On-state characteristics (maximum
values).
ITM (A)
100
Tj max
10
Tj=25°C
VTM(V)
Tj max.
Vto = 0.85 V
Rd = 35 mΩ
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 5: Surge peak on-state current versus
number of cycles.
ITSM (A)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
1
Repetitive
Tc=90°C
Non repetitive
Tj initial=25°C
Number of cycles
10
100
t=20ms
One cycle
1000
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
ITSM (A), I²t (A²s)
1000
dI/dt limitation:
50A/µs
100
10
0.01
tp (ms)
0.10
1.00
Tj initial=25°C
ITSM
I²t
10.00
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
IGT
1.5
IH & IL
1.0
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
Fig. 8-1: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (BW/CW/T1235).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.8
2.4
SW
2.0
C
1.6 B
1.2
0.8
0.4
0.0
0.1
(dV/dt)c (V/µs)
1.0
10.0
BW/CW/T1235
100.0
Fig. 8-2: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (TW).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
5.0
4.5
4.0
3.5
TW
3.0
2.5
2.0
1.5
1.0
0.5
(dV/dt)c (V/µs)
0.0
0.1
1.0
10.0
100.0
5/7
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