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2SC1047 View Datasheet(PDF) - Wing Shing International Group

Part Name
Description
Manufacturer
2SC1047
WingShing
Wing Shing International Group WingShing
2SC1047 Datasheet PDF : 1 Pages
1
2SC1047
Silicon Epitaxial Planar Transistor
GENERAL DESCRIPTION
High frequency, high power transistors in a plastic
envelope, primarily for use in audio and general
purpose
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
LIMITING VALUES
SYMBOL
VCESM
VCEO
VEBO
IC
IB
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
MT-100
Tmb 25
IC = 4.0A; IB = 0.4A
IF = 4.0A
IC=4.0A,IB1=-IB2=0.4A,VCC=60V
CONDITIONS
VBE = 0V
Tmb 25
ELECTRICAL CHARACTERISTICS
SYMBOL
ICBO
IEBO
V(BR)CEO
VCEsat
hFE
fT
Cc
ton
ts
tf
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
VCB=160V
VEB=5V
IC=1mA
IC = 4.0A; IB = 0.4A
IC = 1A; VCE = 5V
IC = 1A; VCE = 12V
VCB = 10V,f=1MHZ
IC=4A,IB1=-IB2=0.4A,VCC=60V
IC=4A,IB1=-IB2=0.4A,VCC=60V
IC=4A,IB1=-IB2=0.4A,VCC=60V
Wing Shing Computer Components Co., (H.K .)L td.
Homepage: http: / / www.wingshing.com
Tel: (852)234 1 92 76 Fax : (852)279 7 8153
E-mail: wsccltdh@ k star.com
TYP MAX UNIT
-
160
V
-
140
V
-
12
A
-
A
-
100
W
-
3
V
1.5
2.0
V
0.35 1.0
s
MIN MAX UNIT
-
160
V
-
140
V
6
V
-
12
A
-
3
A
-
100
W
-55 150
-
150
TYP MAX UNIT
-
0.2
mA
-
0.2
mA
140
V
-
2
V
50
200
5
-
MHz
210
-
pF
us
us
0.35 1.0
us
 

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