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BU1507AX View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BU1507AX
Philips
Philips Electronics Philips
BU1507AX Datasheet PDF : 0 Pages
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ103AU
10 Zth j-mb / (K/W)
D=
1
0.5
0.2
0.1
0.05
0.1
0.02
0
0.01
10us
PD
1ms
t/s
tp
D
=
tp
T
T
t
0.1s
10ms
Fig.13. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
ton/toff (ns)
10,000
toff
5,000
3,000
2,000
100C
1,000
500
ton
25C
300
200
IC/IB = 5
100
1
2
3
4
5
6
IC/A
Fig.14. Resistive Switching.
ton,toff = f(IC).
tfi/tsi (ns)
5,000
100C
2,000
tsi
1,000
500
25C
IC/IB = 5
200
100
tfi
50
20
10
1
2
3
4
5
6
IC/A
Fig.15. Inductive switching.
ton, toff = f(IC)
VCC
IBon
-VBB
LC
LB
VCL(RBSOAR)
PROBE POINT
T.U.T.
Fig.16. Test Circuit for reverse bias safe operating
area.
Vcl 700V; Vcc = 150V; VBB = -5V; LB = 1µH; Lc =
200µH
IC (A)
9
8
7
VBE=-5V
6
5
4
3
2
1
0
0 100 200 300 400 500 600 700 800 900
VCEclamp (V)
Fig.17. Reverse bias safe operating area Tj Tjmax
October 1999
5
Rev 1.100
 

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