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BU2508DX View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BU2508DX
Philips
Philips Electronics Philips
BU2508DX Datasheet PDF : 0 Pages
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ103AU
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for
use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCBO
VCEO
IC
ICM
Ptot
VCEsat
hFEsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
D.C. current gain
Fall time
CONDITIONS
VBE = 0 V
Tmb 25 ˚C
IC = 3.0 A;IB = 0.6 A
IC = 3.0 A; VCE = 5 V
IC = 2.5 A; IB1= 0.4 A
TYP.
-
-
-
-
-
-
0.25
12.5
46
MAX.
700
700
400
4
8
50
1.0
-
60
UNIT
V
V
V
A
A
W
V
ns
PINNING - SOT533
PIN
DESCRIPTION
1 base
2 collector
3 emitter
tab collector
PIN CONFIGURATION
12
Top view
3
MBK915
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
VCBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Tmb 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
in free air
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
700
400
700
4
8
2
4
50
150
150
UNIT
V
V
V
A
A
A
A
W
˚C
˚C
TYP.
-
70
MAX.
2.5
-
UNIT
K/W
K/W
October 1999
1
Rev 1.100
 

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