DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

TYN1012T View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
TYN1012T
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TYN1012T Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Characteristics
TN1215, TYN612, TYN812, TYN1012
Figure 5. Relative variation of thermal
impedance junction to ambient versus pulse
duration
1.00
K=[Zth(j-a)/Rth(j-a)]
Device mounted on FR4 with
recommended pad layout
DPAK
0.10
D2PAK
TO-220AB / IPAK
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
Figure 6. Relative variation of gate trigger and
holding current versus junction temperature
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.4
2.2
2.0
1.8
IGT
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Tj(°C)
0.0
-40 -20
0
20
40
60
TN1215 and TYNx12 Series
IH & IL
80 100 120 140
Figure 7. Surge peak on-state current versus
number of cycles
Figure 8. Non-repetitive surge peak on-state
current and corresponding values of I2t versus
sinusoidal pulse width
 ,760 $













5HSHWLWLYH

7F ƒ&


717<1
1RQUHSHWLWLYH
7LQLWLDO ƒ&
1XPEHURIF\FOHV


W3 PV
2QHF\FOH
,760 $  ,W $V

, 76 0


G,GWOLPLWDWLRQ
7MLQLWLDO ƒ&
717 <1



WS PV


 
Figure 9. On-state characteristics (maximum
values)
ITM(A)
200
100
Tj max.:
Vt0=0.85V
Rd=30mΩ
Figure 10. Thermal resistance junction to
ambient versus copper surface under tab
(DPAK and D²PAK)
Rth(j-a)(°C/W)
100
Epoxy printed circuit board FR4
copper thickness = 35 µm
80
Tj=max
10
Tj=25°C
60
DPAK
40
D2PAK
20
VTM(V)
1
S(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
2
4
6
8 10 12 14 16 18 20
4/15
DocID7475 Rev 10
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]