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TS1220 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
TS1220
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TS1220 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
TN12, TS12 and TYNx12 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s SENSITIVE
Symbol
Test Conditions
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 140
VD = VDRM RL = 3.3 kRGK = 1 k
IRG = 10 µA
IT = 50 mA RGK = 1 k
IG = 1 mA RGK = 1 k
VD = 67 % VDRM RGK = 220
ITM = 24 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM RGK = 220
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
TS1220
200
0.8
0.1
8
5
6
5
1.6
0.85
30
5
2
s STANDARD
Symbol
Test Conditions
IGT
VGT
VGD
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 33
VD = VDRM RL = 3.3 k
IT = 500 mA Gate open
IG = 1.2 IGT
VD = 67 % VDRM Gate open
ITM = 24 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
TN1215
TYN
B/H
G x12T x12
2
0.5
2
15
5
15
1.3
0.2
40
30
15
30
80
60
30
60
200
40
200
1.6
0.85
30
5
2
Unit
µA
V
V
V
mA
mA
V/µs
V
V
m
µA
mA
Unit
mA
V
V
mA
mA
V/µs
V
V
m
µA
mA
THERMAL RESISTANCES
Symbol
Rth(j-c)
Rth(j-a)
Junction to case (DC)
Junction to ambient
S = Copper surface under tab
Parameter
S = 1 cm²
S = 0.5 cm²
TO-220AB
IPAK
D²PAK
DPAK
Value
1.3
60
100
45
70
Unit
°C/W
°C/W
2/10
 

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