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Z00607MA 데이터 시트보기 (PDF) - STMicroelectronics

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Z00607MA 0.8 A Triacs - SENSITIVE GATE TRIACS ST-Microelectronics
STMicroelectronics ST-Microelectronics
Z00607MA Datasheet PDF : 6 Pages
1 2 3 4 5 6
Z00607MA
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
IGT (1)
VGT
VD = 12 V RL = 30
I - II - III
IV
ALL
MAX.
MAX.
VGD VD = VDRM RL = 3.3 kTj = 110°C
ALL
MIN.
IH (2) IT = 200 mA
MAX.
IL
IG = 1.2 IGT
I - III - IV
MAX.
II
dV/dt (2) VD = 67 %VDRM gate open Tj = 110°C
MIN.
(dI/dt)c (2) (dV/dt)c = 0.35 A/ms Tj = 110°C
MIN.
Value
5
7
1.3
0.2
5
10
20
10
1.5
Unit
mA
V
V
mA
mA
V/µs
A/ms
Table 5: Static Characteristics
Symbol
Test Conditions
VTM (2) ITM = 1.1 A tp = 380 µs
Tj = 25°C
Vto (2) Threshold voltage
Tj = 110°C
Rd (2) Dynamic resistance
Tj = 110°C
IDRM
IRRM
VDRM = VRRM = 600 V
Tj = 25°C
Tj = 110°C
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1.
MAX.
MAX.
MAX.
MAX.
Value
Unit
1.5
V
0.95
V
420
m
5
µA
0.1
mA
Table 6: Thermal resistances
Symbol
Rth(j-I)
Rth(j-a)
Junction to lead (A.C.)
Junction to ambient
Parameter
Value
60
150
Unit
°C/W
°C/W
Figure 1: Maximum power dissipation versus
RMS on-state current (full cycle)
Figure 2: RMS on-state current versus ambient
temperature (full cycle)
P(W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
IT(RMS)(A)
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
IT(RMS)(A)
1.0
0.9
Rth(j-a) = Rth(j-l)
0.8
0.7
0.6
Rth(j-a) = 150°C/W
0.5
0.4
0.3
0.2
0.1
Tamb (°C)
0.0
0 10 20 30 40 50 60 70 80 90 100 110
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